leshan radio company, ltd. mmbv2101~mmbv2109 ?1/3 MV2101~mv2115 1 3 2 case 318?08, style 8 sot? 23 (to?236ab) mmbv2101lt1 mmbv2103lt1 mmbv2105lt1 mmbv2107lt1 mmbv2108lt1 mmbv2109lt1 MV2101 mv2104 mv2106 mv2108 mv2109 mv2111 mv2115 these devices are designed in the popular plastic package for high volumerequirements of fm radio and tv tuning and afc, general frequency control andtuning applications.they provide solid?state reliability in replacement of mechanical tuning methods. also available in surface mount package up to 33pf. high q controlled and uniform tuning ratio standard capacitance tolerance ? 10% complete typical design curves silicon tuning diode maximum ratings(each diode) rating symbol mv21xx mmbv21xxlt1 unit reverse voltage v r 30 vdc forward current i f 200 madc forward power dissipation @t a = 25c p d 280 225 m w derate above 25c 2.8 1.8 mw/c junction temperature t j +150 c storage temperature range t stg ?55 to +150 c device marking mmbv2101lt1=m4g mmbv2107lt1=4w mmbv2103lt1=4h mmbv2108lt1=4x mmbv2105lt1=4u mmbv2109lt1=4j electrical characteristics (t a =25c unless otherwise noted) characteristic symbol min typ max unit reverse breakdown voltage v (br)r 30 ? ? vdc (i r =1.0 adc) reverse voltage leakage current i r ? ? 0.1 adc (v r =25vdc,t a =25c) diode capacitance temperature coefficient tc c ? 280 ? ppm/c (v r =4.0vdc,f=1.0mhz) 6.8-100p 30 volts voltage variable capacitance diodes 3 cathode 1 anode
leshan radio company, ltd. mmbv2101~mmbv2109 ?2/3 MV2101~mv2115 min nom max typ min typ max mmbv2101lt1/MV2101 6.1 6.8 7.5 450 2.5 2.7 3.2 mmbv2103lt1 9.0 10 11 400 2.5 2.9 3.2 mv2104 10.8 12 13.2 400 2.5 2.9 3.2 mmbv2105lt1/mv2105 13.5 15 16.5 400 2.5 2.9 3.2 mmbv2107lt1 19.8 22 24.2 350 2.5 2.9 3.2 mmbv2108lt1/mv2108 24.3 27 29.7 300 2.5 3.0 3.2 mmbv2109lt1/mv2109 29.7 33 36.3 200 2.5 3.0 3.2 mv2111 42.3 47 51.7 150 2.5 3.0 3.2 mv2115 90 100 110 100 2.6 3.0 3.3 mmbv2101lt1, mmbv2103lt1, mmbv2105lt1, mmbv2107lt1 thru mmbv2109lt1, are also available in bulk. use the device title and drop the ?t1? suffix when ordering any of these devices in bulk. mmbv2101lt1 mmbv2103lt1 mmbv2105lt1 mmbv2107lt1 mmbv2108lt1 mmbv2109lt1 MV2101 mv2104 mv2105 mv2108 mv2109 mv2111 mv2115 c t , diode capacitance v r = 4.0 vdc, f = 1.0 mhz pf t r , tuning ratio c 2 /c 30 f = 1.0 mhz q, figure of merit v r = 4.0 vdc, f = 50 mhz parameter test methods 1. c t , diode capacitance (c t = c c + c j ). c t is measured at 1.0 mhz using a ca-pacitance bridge (boonton electronics model 75a or equivalent). 2. t r , tuning ratio t r is the ratio of c t measured at 2.0 vdc divided by c t measured at 30 vdc. 3. q, figure of merit q is calculated by taking the g and c readings of an ad-mittance bridge at the specified frequency and substitut-ing in the following equations: q = 2 fc g (booton electronics model 33as8 or equivalent).use lead length ~ 1/16?. 4.t c c ,diode capacitance temperature coefficient tc c is guaranteed by comparing c t at v r =4.0vdc,f=1.0mhz, t a = ? 65 c with c t at v r =4.0vdc,f=1.0mhz,t a = +85 c in the following equation,which defines tc c : c t (+85 c )? c t (?65 c )10 6 tc c = 85+65 . c t (25 c ) accuracy limited by measurement of c t to0.1pf. device ~
leshan radio company, ltd. mmbv2101~mmbv2109 ?3/3 MV2101~mv2115 typical device characteristics mmbv2101lt1 mmbv2103lt1 mmbv2105lt1 mmbv2107lt1 mmbv2108lt1 mmbv2109lt1 MV2101 mv2104 mv2105 mv2108 mv2109 mv2111 mv2115 figure 1. diode capacitance versus reverse voltage figure 2. normalized diode capacitance versus junction temperature figure 3. reverse current versus reverse bias voltage figure 4. figure of merit versus reverse voltage v r , reverse voltage (volts) 1.0 2.0 0.2 10 3020 1.0 2.0 5.0 10 1000 50 20 100 500 5.0 0.5 0.1 200 c t , diode capacitance (pf) mmbv2109lt1/mv2109 1.040 1.030 1.020 1.010 1.000 0.990 0.980 t j , junction temperature ( c) +125 -75 -25 0 +25 +50 -50 +75 normalized diode capacitance +100 0.970 0.960 v r = 2.0 vdc v r = 4.0 vdc v r = 30 vdc 100 50 20 10 5.0 0.01 v r , reverse voltage (volts) 5.0 10 20 15 25 i 30 , reverse current (na) r 0.02 0.05 0.10 0.20 0.50 1.0 2.0 t a = 125 c t a = 75 c t a = 25 c 100 200 500 1000 5000 2000 1.0 2.0 5.0 7.0 10 3.0 20 v r , reverse voltage (volts) q, figure of merit 2000 1000 200 500 300 100 f, frequency (mhz) 10 30 50 70 q, figure of merit 100 3000 50 30 20 10 20 200 250 t a = 25 c f = 50 mhz mv2115 t a = 25 c v r = 4.0 vdc mv2115 figure 5. figure of merit versus frequency mmbv2105lt1/mv2105 mmbv2101lt1/MV2101 3.0 0.3 0 10 20 50 300 3000 30 30 mmbv2101lt1/MV2101 mmbv2109lt1/mv2109 5000 mmbv2101lt1/MV2101 mmbv2109lt1/mv2109 normalized to c t at t a = 25 c v r = (curve) mv2115
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